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CYD01S18V-133BBI

Part No :

CYD01S18V-133BBI

Manufacturer
Rochester Electronics
Description
DUAL-PORT SRAM, 64KX18, 4NS
Catalog
Memory
DataSheet
CYD01S18V-133BBI PDF
Unit Price
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Stock Num
85
Min Qty
6
Package
Bulk

CYD01S18V-133BBI Specifications

Type Description
rohs: RoHS
technology: SRAM - Dual Port, Standard
access time: 4.7 ns
memory size: 1Mb (64K x 18)
memory type: Volatile
part status: Active
memory format: SRAM
mounting type: Surface Mount
package / case: 256-LBGA
clock frequency: 133 MHz
memory interface: Parallel
voltage - supply: 1.7V ~ 1.9V
operating temperature: -40°C ~ 85°C (TA)
supplier device package: 256-FBGA (17x17)
write cycle time - word, page: -